By B. Jayant Baliga
"Advanced strength MOSFET strategies" offers an in-depth remedy of the physics of operation of complex strength MOSFETs. Analytical types for explaining the operation of all of the complex strength MOSFETs are built and defined. the result of numerical simulations are supplied to provide extra perception into the machine physics and validate the analytical versions. the result of two-dimensional simulations also are given, which will corroborate the analytical types and provides additional perception into the gadget operation. This quantity additionally: -Discusses units which can have an important effect on bettering the potency of the voltage-regulator-modules used to bring energy to microprocessors and pix chips in laptops and servers -Covers functions in all decrease voltage circuits, specially the automobile electronics quarter contains numerical simulation examples to give an explanation for the working physics and validate the versions - deals broad assurance of the position of silicon carbide within the layout and constitution of strength rectifiers "Advanced energy MOSFET thoughts" is a must-read for researchers and working towards engineers within the strength machine industry.
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Extra resources for Advanced Power MOSFET Concepts
53, pp. 1759–1764, 1982. 6. J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985. 7. M. M. J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992. 8. W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967. 9. R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol.
5) where NA is the doping concentration in the P-base region and NDJ is the doping concentration in the JFET region. 6) In practical devices, the P-base region is diffused into the N-drift region producing a graded doping profile. However, these expressions based upon assuming a uniform doping concentration for the P-base region are adequate for analytical computations. It is common practice to enhance the doping concentration for the JFET region above that for the drift region. It is therefore appropriate to use the enhanced doping concentration (NDJ) of the JFET region in the above expressions.
These values were consequently used in the analytical models when calculating the specific on-resistance. 3 Blocking Voltage The power D-MOSFET structure must be designed to support a high voltage in the first quadrant when the drain bias voltage is positive. During operation in the blocking mode, the gate electrode is shorted to the source electrode by the external gate bias circuit. The application of a positive drain bias voltage produces a reverse bias across junction J1 between the P-base region and the N-drift region, as well as across junction J3 between the deep P+ region and the N-drift region.